| 摘要 |
PROBLEM TO BE SOLVED: To prevent the etching failure of a semiconductor layer formed on a wafer from occurring. SOLUTION: In a method for manufacturing a semiconductor element, a semiconductor layer 5 is formed on a wafer 4 and is subjected to patterning into a specific shape, and then an electrode is formed for cutting into each semiconductor element. A resist film 3 is deposited at a part where the semiconductor layer 5 should remain at the same, time a narrow resist film 10 is deposited at a part where the semiconductor layer 5 should be eliminated, and the semiconductor layer 5 below the narrow resist film 10 is eliminated through side etching, thus patterning the semiconductor layer 5 into specific shape.
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