| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity of a resist film thickness on a Si wafer, dimensional accuracy in a PEB process, and the yield of a semiconductor device, by means of preventing an uneven exhaustion with a straightening vane for regulating evacuation over a wafer in a heat treatment unit, resulting the controlled temperature distribution in the heat treatment unit, vaporization of an organic solvent in a resist solvent, emission of gas volume, and uniform concentration distribution of a diffused photosensitive photolysis emulsion in the PEB process. SOLUTION: A straightening vane 5 for controlling evacuation is arranged with a predetermined gap kept over a semiconductor wafer 2 put in a heat treatment unit. The vane has at least one or more holes on it decided by the diameter of the semiconductor wafer 2 and a variable mechanism for controlling the gap between the semiconductor wafer 2 and the vane. The diameter of the one or more holes provided on the straitening vane 5 are determined by a combination of an evacuation volume of the heat treatment unit and an installation position of the evacuation unit as well as the diameter of the semiconductor wafer 2.
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