| 摘要 |
PROBLEM TO BE SOLVED: To stably maintain operating threshold, secure a large junction breakdown voltage, restrict a junction capacity, and restrict hot carriers in a semiconductor having a suitable structure in making fine a MIS type transistor. SOLUTION: A gate insulation film 52 and a gate electrode 54 are formed in a substrate 36, containing an N type impurity such as P, As, or the like. A gate region 40 is formed under the gate insulation film 52, and first and second source drain regions 48, 50 are formed on both sides. A high concentration channel injection region 42 containing the N-type impurity at a higher concentration than the substrate 36 is provided at a center of the gate region 40. First and second low concentration channel injection regions 44, 46 having the substantially same impurity concentration as the substrate 36 are formed between the high concentration channel injection region 42 and the first and second source drain regions 48, 50, respectively.
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