| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the re-deposition of an object to be etched on the side wall of a resist without obstructing refinement by forming a photoresist layer inside a step formed on the film to be etched and, after the photoresist is exposed and developed by etching the film to be etched, baking the developed photoresist. SOLUTION: A lower electrode film 103, a ferroelectric film 102, and an upper electrode film 101 are successively formed on a flat first interlayer insulating film 104 formed on a semiconductor substrate. Then, after a photoresist 106 is applied, exposed, and developed, the photoresist 106 is baked at 180-200 deg.C and the upper electrode film 101 is etched. In addition, the ferroelectric film 102 is also etched by a similar method. Thereafter, the photoresist of the resist pattern of the lower electrode film 103 is exposed and developed so that the resist pattern may get in the pattern of the ferroelectric film 102 by about 1 μm and the developed photoresist is baked at 180 deg.C. When the resist is baked, the resist is on the flat part of the ferroelectric film 102 and the tapered angle of the resist is <=70 deg.. Then etching is performed. |
