| 摘要 |
PROBLEM TO BE SOLVED: To obtain a nitride semiconductor whose photoluminescence intensity is high and which can be used as a light emitting diode or a laser diode by a method, wherein In atoms in a ratio of a specified % value with respect to Ga atoms are contained in GaN. SOLUTION: An Al2O3 (0001) substrate 31 after an ordinary cleaning process is etched for 20 minutes in a 10% HF solution, and it is dried by N2 gas. The substrate 31 is introduced into a growth chamber 11, and it is annealed in a vacuum at 750 deg.C. Then, the substrate 31 is nitriding-treated for five minutes by NH3. After that, ammonia is first supplied at a rate of 15 cc/min from a gas supply line 15 at a substrate temperature of 500 deg.C, a Ga flux is supplied from a Ga Knudsen cell 17 under a condition which achieves a growth speed of 1,800 Å/h, and a GaN buffer layer 33 is grown to be a thickness of 250 Å. A GaN thin film 35 which has a thickness of about 3,500 Å and which contains In in a trace amount is formed on it. In addition, In atoms are contained in a ratio of 0.1 to 0.45% to Ga atoms. |
