| 摘要 |
PROBLEM TO BE SOLVED: To make a high temperature treatment possible and increase the yield and the reliabilility without decreasing the degree of integration by using an electrolytic or electroless plating layer for at least one of an upper and a lower electrode which have a ferroelectric in between. SOLUTION: In a semiconductor substrate with a ferroelectric substance disposed on a semiconductor substrate, a pair of electrodes are formed to have the ferroelectric substance in between, with at least one of the electrodes being formed through electroless plating. First, Pt/Ti is deposited and is patterned with a resist as a mask, except for an interconnection section. After forming an Au plating interconnection 111, a via layer is etched with the Au plating layer as a mask. Next, Ru 112 is formed by electroless plating and is oxidized to form an RuO2 layer 113. Then, PZT (PbTiO3/PbZrO3) 114, Pt 115 for an upper electrode and ferroelectric substance are deposited. After that, a plasma TEOS film 116 is etched back over the entire surface by thermal RIE and is flattened. Then, SOG is spin-coated and annealed. After the SOG in a flat section is etched back, a hole is made, and an upper interconnection is formed. Pt/Ti 117 is used as a barrier metal, and Au plating 118 is used for an interconnection. |
