| 摘要 |
PROBLEM TO BE SOLVED: To provide a mutual connection structure in a semiconductor device that has advantages as compared with prior art and the method for forming the same. SOLUTION: A mutual connection part 60 is formed on a substrate 10. In an embodiment, an adhesive/barrier layer 81, a copper alloy seed layer 42 and a copper film 43 are deposited on the substrate 10, and the substrate 10 is annealed. In an alternative embodiment, the copper film is deposited on the substrate and the copper film is annealed. Furthermore, in another embodiment, the adhesive/barrier layer 81, a seed layer 82, a conductive film 83 and a copper alloy capping film 84 are deposited on the substrate 10 to form a mutually connecting part 92. The stages of depositing and annealing are performed on a common processing platform. |
