发明名称 CHARGE PUMP CIRCUIT AND NONVOLATILE SEMICONDUCTOR MEMORY HAVING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a charge pump circuit capable of generating a positive and negative potentials. SOLUTION: Resetting circuits 52, 70 give fixed potentials to output nodes Noutn, Noutp which output a negative and positive potentials VN, VPS, respectively, when it is not being used. When a negative potential is generated, switches SW2, SW3 are turned on. When a positive potential is generated, switches SW1, SW4 are turned on. Reference potentials of generated potentials are given to inner nodes N10, N20 via the switches SW1, SW3, respectively. A voltage generator 53 uses polydiode elements and hence a charge pump circuit capable of generating a positive and negative voltages can be realized, without greatly changing the manufacturing method.</p>
申请公布号 JP2000049299(A) 申请公布日期 2000.02.18
申请号 JP19980311189 申请日期 1998.10.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 OGURA TAKU;MIHARA MASAAKI
分类号 G11C16/06;H01L21/8247;H01L27/10;H01L27/115;H02M3/07;(IPC1-7):H01L27/10 主分类号 G11C16/06
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