发明名称 READ ONLY MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To control sensing operation adaptively to a variety of clock frequency signals by generating and a second control signal being applied to a latch circuit in addition to a first control signal in response to information corresponding to the pulse period of a clock signal and the latch circuit connected with the output of a sense amplifier. SOLUTION: Output from a sense amplifier 9 is transmitted through a sense amplifier latch circuit 11 to a data buffer 13. The sense amplifier 9 and the latch circuit 11 are connected with a sense amplifier control circuit 15 being applied with a clock signal CLK and a latency information signal LI. An address transition detecting circuit supplies a master signal MS. A mode register generating a signal for determining the number of clock cycles of the CLK before appearance of a first data bit supplies the latency information signal LI. The sense amplifier control circuit 15 operates the sense amplifier 9 and the latch circuit 11 with the latency information signal LI for regulating sensing operation optimally.
申请公布号 JP2000048588(A) 申请公布日期 2000.02.18
申请号 JP19990210986 申请日期 1999.07.26
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 BOKU JUNHON
分类号 G11C17/18;G11C7/06;G11C7/10;H03K5/00;(IPC1-7):G11C17/18 主分类号 G11C17/18
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