发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To form a damascene wiring which has separated fine wiring lines of a Blech critical length and is high in EM and SM immunities, without causing increase in wiring resistance. SOLUTION: A wiring groove 2 is made in an interlayer insulating film 1, the groove 2 is embedded with a conductive film of a first substance as a wiring film having a thickness larger than a depth of the groove 2, an Al film 4 is formed with sizes of crystalline grains in the film 4 thermally stabilized simultaneously therewith, a Cu film 6 is formed on the Al film 4, Cu is selectively diffused into grains of the Al film 4 within the groove 2 to selectively form aθlayer 7a in the grains of the film 4 and to cause the length of the film 4 within the groove to be separated by the layer 7a into a plurality of fine Al wirings, and finally excess Al and Cu films 2 and 6 outside of the groove 2 are removed.
申请公布号 JP2000049164(A) 申请公布日期 2000.02.18
申请号 JP19990145848 申请日期 1999.05.26
申请人 TOSHIBA CORP 发明人 HASUNUMA MASAHIKO;SHIMA SHOHEI;KANEKO HISAFUMI;ITO SACHIYO
分类号 H01L21/3205;H01L21/4763;H01L21/768;H01L23/48;H01L23/52;H01L23/532;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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