SURFACE LIGHT EMITTING SEMICONDUCTOR LASER AND OPTICAL COMMUNICATION MODULE AND PARALLEL INFORMATION PROCESSOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the efficiency of the manufacture process of a surface light emitting semiconductor laser, to improve a yield and to perform improvement is reliability and reduction of the cost for the surface light emitting semiconductor laser, an optical communication module and a parallel information processor using it, by easily selectively oxidizing a current constriction layer just by one time etching. SOLUTION: For a multi-layer film reflection mirror 2, a semiconductor multi-layer film structure constituted of a high refractive index semiconductor layer composed of gallium arsenide or aluminum gallium arsenide and a low refractive index semiconductor layer composed of a III-V compound semiconductor including phosphorus is used. The materials are not affected by selective oxidization for current constriction. Thus, the need of performing a special protective process is eliminated and this plane light emission type semiconductor laser with the high yield is manufactured just by one time etching.