HEAT CONDUCTING MATERIAL AND PRODUCTION THEREOF, HEAT CONDUCTING PLATE AND SEMICONDUCTOR PACKAGE

摘要

PROBLEM TO BE SOLVED: To provide an easily machinable material exhibiting having coefficient of thermal expansion close to that of a semiconductor chip and thermal conductivity exceeding that of silicon (150 W/m.K) and a heat dissipation plate made of that material. SOLUTION: A semiconductor package l0 comprises a semiconductor chip 11, and a heat dissipation plate 12 for transmitting heat of the semiconductor package 10 to the outside. The heat dissipation plate 12 is made of a heat conducting material produced by depositing SiC in Si while dispersing. Since the deposited SiC has crystal structure of Moissanite-3C and high thermal conductivity, the entire material exhibits thermal conductivity exceeding that of Si.