发明名称 ELEMENT ANALYZING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To highly accurately analyze a composition of an extremely fine area in combination with the miniaturization of an analytical area by thinning a sample by suppressing the re-adhesion of carbon and oxygen becoming the trouble of analysis with respect to a thin film sample and enabling highly accurate AES analysis. SOLUTION: A thin film sample 1 is fixed to a sample stand 2 to be introduced into an ultrahigh vacuum apparatus and ion sputtering of about 100Åis performed while the sample stand 2 is rotated. Any kind of the sample stand is used. Next, the sample stand 2 is taken out of the ultrahigh vacuum apparatus and the thin film sample 1 is taken out of the sample stand 1. Next, the thin film sample is reversed in order to etch an opposite surface and fixed to a sample stand 3 having a Farady cup therein. At this time, the hole 4 reaching the surfrace of the sample stand 3 from the Farady cup and an analyzing region 5 are allowed to coincide with each other. Again, the sample stand 3 and the thin film specimen are introduced into the measuring chamber of AES held to a superhigh vacuum state and, while the sample stand 3 is rotated, ion sputtering of about 100Åis performed. Thereafter, AES measurement is performed.</p>
申请公布号 JP2000046770(A) 申请公布日期 2000.02.18
申请号 JP19980214952 申请日期 1998.07.30
申请人 SHARP CORP 发明人 FUJIWARA NORIHITO
分类号 G01N23/227;G01N1/34;H01J37/256;(IPC1-7):G01N23/227 主分类号 G01N23/227
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