| 摘要 |
PROBLEM TO BE SOLVED: To prevent etching from scattering and to make electrical characteristics uniform by providing a strip trench where an element isolation region is regularly arranged at the same interval with the same width from one to the other end of a memory cell array and an insulation film being embedded and formed into the trench. SOLUTION: A plurality of trenches 22 in a thin strip and with the same width in the row direction of a memory cell array are formed at an equal interval, from the left to the right end of the memory cell array on the main surface of a silicon substrate 21. An insulation film 23 is embedded into the trench 22 and an element isolation region 24 in STI structure is formed. Source and drain regions are formed at a specific interval, while being separated each other in the element region of the silicon substrate 21 that is separated by the element isolation region 23, thus allowing the memory cell array to have a high pattern periodicity, preventing etching from scattering, and making uniform various kinds of electrical characteristics for each memory cell.
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