| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is suited for raising the level of integration expanding the scale, and hybridizing analog circuits with digital circuits and has a high operation reliability in an environment with high noise level. SOLUTION: A semiconductor substrate 2 is provided with, including element forming regions 4, an n-type guard ring 5 for shielding the element forming regions 4 which is formed around the element forming regions 4 in the semiconductor substrate 2 and connected to a positive power terminal VDD, and a p-type diffused layer 6 which is formed in the interior of the n-type guard ring 5 and connected to a negative power terminal VSS. The n-type guard ring 5 and the p-type diffused layer 6 are reverse biased to form a capacitor 7.
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