| 摘要 |
PROBLEM TO BE SOLVED: To form a thermoelectric power generation element which outputs a practical voltage, even at a low temperature difference by a method, wherein a heating means and a heat dissipating means are installed respectively at both ends of a semiconductor pair formed on a semiconductor chip. SOLUTION: A P-type semiconductor 5 and an N-type semiconductor 7 are formed on an intrinsic semiconductor chip 8 by a diffusion operation or the like. A semiconductor pair which is connected in series by an aluminum evaporated interconnection or the like is constituted. A heat conduction band A 3 and a heat conduction band B 9 heat or absorb heat at both ends of the semiconductor pair. In addition, heat is conducted to the outside of a package 6 by a heat conduction metal A 1 and a heat conduction metal B 12 by using a bonding wire 2. For example, when the heat conduction metal A 1 is kept at a high temperature and the heat conduction metal B 12 is kept at a low temperature, the heat conduction band A 3 is set to the side of high temperature, and the heat conduction band B 9 is set to the side of the low temperature by heat conduction. A temperature difference is generated between both ends of the semiconductor pair. Consequently, when the heat conduction metal B 12 is added between an electrode A 11 and an electrode B 13, a DC voltage is generated, and it is possible to form a thermoelectric power generation element which can generate electric power, even with small temperature difference.
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