| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and a fabrication method thereof, having a sidewall structure for which damages in the shape of the gate electrode and short circuit between the gate electrode and a metal electrode in a contact hole can be prevented at etching of a self-aligned contact hole without sacrificing reliability of a transistor. SOLUTION: This semiconductor device comprises an electrode wiring composed of lower conductive film of tungsten polyside 11 and a first upper insulating film of silicon nitride 13 formed on a silicon substrate 1, a second insulating film of silicon nitride 15 formed contiguously to the sidewall of the electrode wiring, a third insulating film of silicon oxide 14 formed between the silicon nitride 15 and the silicon substrate 1, a fourth insulating film formed as an interlayer insulating film while covering at least the electrode wiring, the sidewall thereof and the second insulating film, and a contact hole 17 made in the fourth insulating film while partially lapping over the gate electrode.
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