| 摘要 |
PROBLEM TO BE SOLVED: To produce a large quantity of photovoltaic elements which have a high quality and excellent uniformity over large area, in high producibility by manufacturing a buffer layer adjacent to the lower layer or upper layer of an i-type semiconductor layer by the high-frequency plasma method using VHF frequency. SOLUTION: A buffer layer adjacent to the lower layer or upper layer of an i-type semiconductor device 504 is manufactured by the high-frequency plasma method using VHF frequency. Thus, the availability of material gas in the film formation furnace for buffer layer can be made high. Further, while uniforming the electric and optical characteristics of deposited film, the range for keeping plasma can be covered from low pressure to ordinary RF plasma radiation maintainable pressure. Especially, in the film formation condition for buffer layer which is manufactured by a higher frequency power than about 13.56 MHz, the film formation pressure can be made lower, realizing an excellent deposition velocity distribution of deposited film and an excellent variation distribution of various properties. |
