| 摘要 |
PROBLEM TO BE SOLVED: To improve latch up resistance and punch-through resistance in an epitaxial wafer. SOLUTION: A first region and a second region, which are different in thickness, are installed in a p- epitaxial layer 3a formed on the main face of a p+ silicon substrate 1a. A p-well 5 is formed in the first region whose thickness is relatively small, and an n-well 4 is formed in the second region whose thickness is relatively large. A pMOS transistor is formed on the n-well 4, and an nMOS transistor is formed on the p-well 5.
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