| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable the self-matching formation of reflection electrodes by a selective ALCVD method by using a ground surface conductive film and to facilitate the planatarization of the reflection electrodes by forming an insulating film to be packed into pixel sepn. regions on a reflection film, then polishing the insulating film until the reflection film is exposed. SOLUTION: Pure-Al is selectively grown to form the reflection electrodes 13 by the selective AICVD method in the process for formation of the interlayer insulating film of the semiconductor device. When the pure-Al is deposited, the pure-Al is selectively deposited only on the conductive film 10 and the pure-Al is not deposited in the exposed parts of the capactive film 8 in the transverse direction of the conductive film 10 covered by the insulating film 11, i.e., in the blanked patterns of the conductive film, by which the shapes of the blanked patterns are maintained. Simultaneously the pure-Al is deposited within the through-holes as well to embed the through-holes. Next, the insulating film 14 is deposited by the CVD method and thereafter, the insulating film 14 and the reflection electrodes 13 are polished by a CMP method until the surfaces of the reflection electrodes 13 are partly exposed.</p> |
