发明名称 SOURCE VOLTAGE GENERATING CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an intermediate-voltage generating circuit which is reduced in power consumption. SOLUTION: A reference voltage is generated by resistances 11 and 12. The midpoint X is connected to the gates of P1 and N2 and also connected to the drains of P2 and N1. A saturation connection between the P2 and N1 is made and their sources are connected to the drains of the N2 and P1. The gates of the N1 and P2 are connected to the gates of N3 and P3 connected in series between a positive power source VDD and a negative power source VSS. In this case, the N1 and P2 operate at the limit of a threshold voltage, so the gate of the N3 is biased to a voltage which is the threshold voltage higher than the reference voltage and the gate of the P3 is biased to a voltage which is the threshold voltage lower than the reference voltage. Therefore, the value of a current i3 becomes 0 in a stationary state and an intermediate source voltage generating circuit 10 consumes little electric power.
申请公布号 JP2000047743(A) 申请公布日期 2000.02.18
申请号 JP19980218186 申请日期 1998.07.31
申请人 YAMAHA CORP 发明人 SEKIMOTO YASUHIKO
分类号 H01L27/04;G05F3/24;H01L21/822;H01L21/8234;H01L27/088;H03F3/345;(IPC1-7):G05F3/24;H01L21/823 主分类号 H01L27/04
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