| 摘要 |
PROBLEM TO BE SOLVED: To provide a doping structure, for controlling even a short channel device having a channel length of 0.5μm or less. SOLUTION: This semiconductor device comprises a gate 40, a gate oxide layer 41 beneath the gate 40, a source region 42 and a drain region 43 having a junction depth 45, a channel length 44, a halo injection part 46, a compensated injection part 47, and a side distribution tail 48. The compensated injection part 47 is provided beneath the gate oxide layer 41 and is surrounded by the halo injection part 46. The side distribution tail 48 is reduced at the halo injection part using a self-aligned gate compensated injection part, so that the distribution tail is not overlapped thus eliminating short channel Vt roll-off.
|
