发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To narrow a line width, to improve modulation efficiency and to improve frequency responses. SOLUTION: In a resonator 100, an active waveguide 140a and a passive waveguide 140b are formed. A Bragg diffraction grating 170b is formed in the passive waveguide 140b, light P generated in the active waveguide 140a is selectively reflected, and a laser beam L is oscillated. Such a laser beam L is frequency modulated (FM) by utilizing refractive index change inside the passive waveguide 140b by power applied through a second electrode 160b. Further, for the laser beam L, FM efficiency is adjusted through a resistance heating film 180b installed on an element surface 100C so as not to overlap with the second electrode 160b.
申请公布号 JP2000049411(A) 申请公布日期 2000.02.18
申请号 JP19980214549 申请日期 1998.07.29
申请人 OKI ELECTRIC IND CO LTD 发明人 KUNII TATSUO
分类号 H01S5/00;H01S5/042;H01S5/30;(IPC1-7):H01S5/30 主分类号 H01S5/00
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