| 摘要 |
PROBLEM TO BE SOLVED: To reduce the input capacity of a junction type field effect semiconductor element. SOLUTION: An N type epitaxial layer 10 is formed on P type semiconductor substrates 8, 9 and a P type internal isolation region 1 is made through the N type epitaxial layer 10 in the center of the P type semiconductor substrate 8 until the bottom thereof reaches the P type semiconductor substrate 9 in order to separate the N type epitaxial layer 10 into inner and outer regions. The gate region 3 of a junction type field effect semiconductor element is provided on the inner region 15 of the N type epitaxial layer 10 serving as the source-drain region of the junction type field effect semiconductor element while being surrounded by the internal isolation region 1. Furthermore, an external connection region 2 of same conductivity type as the semiconductor substrate is provided at the end of the P type semiconductor substrate 8. A resistor element 12 is provided on the outer region of the N type epitaxial layer 10 and connected with the external connection region 2. |
