| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration in electrical characteristics of a capacitive device by preventing the reduction of an insulating metal oxide constituting a ferroelectric film or dielectric film of high permittivity in the removal of a resist mask. SOLUTION: On a semiconductor substrate 10, a lower electrode 11 constituted of a platinum film, a capacitive insulating film constituted of a ferroelectric film or dielectric film of high permittivity, and an upper electrode 13 constituted of a platinum film are formed in order. After that, a protective insulating film 14 is deposited over the entire surface of the upper electrode 13. Then, the protective insulating film 14 is dry-etched with a resist mask 15 formed on it to form a first contact hole 16A and a second contact hole 16B in the protective insulating film 14. After that, the resist mask 15 is removed with a mask remover made of an organic solvent. |
