| 摘要 |
PROBLEM TO BE SOLVED: To enable to reliably heat substrates to a specified temperature by forming slits for exhaust in clearance between plural lower heat blocks, by jetting inert gas from above the lower heat blocks and by transporting semiconductor substrates onto the lower heat blocks intermittently in sequence. SOLUTION: Lower heat blocks 1 comprise heat block main bodies 12 having heater inserting parts 10 and inert gas passages 11 and heating pieces 13 provided on the top of the heat block main bodies 12. Slits 14 for exhaust passing through exhaust tubes are formed between adjacent lower heat blocks 1. Then one end of the inert gas passages 11 is closed and inert gas such as nitrogen gas is supplied through an inert gas supply part provided at the other end to the inert gas passages 11. The inert gas is jet out from jetting outlet in the heating pieces 13 into a heating chamber. Semiconductor substrates are intermittently transported in sequence onto the lower heat blocks.
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