| 摘要 |
PROBLEM TO BE SOLVED: To provide a shallow trench insulating structure by forming a pad oxide layer and a mask layer on a substrate, forming an insulating layer which fills even the trench formed by patterning, depositing a layer of specific material over it, and removing the mask layer by etching back. SOLUTION: A pad oxide layer 302 is formed on a substrate 300, a mask layer 304 is deposited, an etching is performed for etching out a shallow trench 305, and an oxide layer 312 is deposited which fills the trench in the shallow trench 305 with the use of a silicon oxide material. After that, a specific- material layer 308 is formed over it using an SOP comprising a carbon-base polymer and an organic solvent. The oxide layer 312 and the specific-material layer 308 are etched back to expose the mask layer 304, which is removed while the upper part of the oxide layer filling a trench above the surface of the pad oxide layer 302 is left high.
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