Verfahren zum Messen der Temperatur eines Leistungshalbleiters und Bauelement

摘要

The invention relates to a method for measuring the operating temperature of a power semiconductor (1) comprising at least one barrier zone with a high operating temperature, whereby a high reaction rate can be obtained. It also relates to a component with a power semiconductor (1) comprising at least one barrier zone with a high operating temperature. In order to determine reliably and rapidly the operating temperature of said power semiconductor, said temperature is measured directly on the barrier zone of said power semiconductor (1) with a high operating temperature. For that purpose, a thermosensitive element (2, 6) is placed directly on the barrier zone with a high operating temperature.