| 摘要 |
<p>A thin film (2) having a density of electrons of more than 2 1016/cm3 and having a composition of In¿x?Gai-xAsySb1-y (0∫x≤1, 0≤y≤1) is formed on an insulating substrate (1). The dependence of the resistance on temperature is lowered by the setting of the composition of the thin film (2) and by doping the thin film (2) with donner atoms. Thus, a magnetic sensor having a little dependence of the device resistance on temperature and a high sensitivity is provided.</p> |
