发明名称 MOS INTEGRATED CIRCUIT
摘要 A MOS integrated circuit for driving an analog circuit, e.g. an analog switch, with a low power supply voltage by outputting a control voltage of high signal level exceeding the differential voltage (full scale) between the power supply voltage and the ground voltage, wherein a semiconductor element for blocking reverse current flow is provided in any one of a current path comprising a pMOS transistor formed between a first power supply and the output terminal or a current path comprising an nMOS transistor formed between a second power supply and the output terminal, and a circuit means for shifting the voltage through capacitive coupling is provided at the output terminal.
申请公布号 WO0008759(A1) 申请公布日期 2000.02.17
申请号 WO1998JP03440 申请日期 1998.08.03
申请人 HITACHI, LTD.;TSUKADA, TOSHIRO;FUKUDA, KEIKO;OTSUKA, MASANORI;KITAGAWA, AKIHIRO;ICHIKI, SHUZO 发明人 TSUKADA, TOSHIRO;FUKUDA, KEIKO;OTSUKA, MASANORI;KITAGAWA, AKIHIRO;ICHIKI, SHUZO
分类号 H03K17/06;H03K17/687;(IPC1-7):H03K17/06 主分类号 H03K17/06
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