Method to measure two-dimensional potential distribution in CMOS semiconductor element and determine two-dimensional doping distribution, uses electron holography to measure phase of electron wave in transmission electron microscope

摘要

The method involves using electron holography to measure the phase of an electron wave in a transmission electron microscope. The minimum lateral resolution lies in the surrounding region. A level electron wave (1) is modulated by passing it through a thinned cross-section sample of the semiconductor element to be tested. The modulated image wave (3) is enlarged using an objective lens. The enlarged image wave and an even reference wave (6) are superimposed by electron biprisms (4) to produce electron holograms (7), which are recorded. The phase of the image wave is extracted using Fourier analysis, and the two-dimensional potential distribution is measured from the phase image.