Quasi-hemisphärischer Fabry-Perot-Resonator und Verfahren zum Betreiben desselben

摘要

The invention relates to a quasi-hemispherical Fabry-Perot resonator covered by two radiation shields and lodged in a vacuum chamber enabling a defined cryogenic environment for said resonator to be regulated. The resonator conventionally consists of a spherical and a plane mirror, wherein the former is stationary and the latter can be moved parallel and perpendicular to the axis of the resonator and can complete a full rotation around the axis of the resonator. The thin layer to be measured is placed on a substrate that is fixed on the front face of the plane mirror. The plane mirror rests on the front face of a non-heat conductive cantilever arm traversing the radiation shields. The mirror can be heated separately. Transmission of microwave through the resonator is detected with a receiving system whose input is a decoupling orifice in the spherical mirror. The movement of the probe in the resonator, temperature control of the plane mirror and processing of measured values and the resulting determination of local surface resistance of the thin layer are controlled and assisted by computer. High-quality determination of location-dependent surface resistance RS of a supraconductive thin layer can be conducted for the first time.