Floating gate, for a semiconductor device such as a flash-EPROM, is produced by applying a conformal dielectric layer and a conductive layer onto an asymmetrical V-shaped trench

摘要

Floating gate production, by applying a conformal dielectric layer and a conductive layer onto a V-shaped trench, is new. Production of a floating gate on an IC substrate comprises: (a) producing a trench which forms a tip in the substrate; (b) producing a dielectric layer which conforms with the trench; (c) depositing a conductive layer which fills the trench; and (d) etching the conductive layer to define a floating gate, the lower part of which is contained in the trench. Independent claims are also included for the following: (i) a method of producing a semiconductor device on an IC substrate, involving carrying out the above process; (ii) a method of producing an electrically programmable and erasable memory device on an IC substrate comprising forming a device pair, each of which is formed by the above method; (iii) a floating gate formed on an IC substrate by the above process; (iv) semiconductor devices produced by method (i); and electrically programmable and erasable memory devices produced by method (ii).