发明名称 |
MEMORY DEVICE USING A TRANSISTOR AND ITS FABRICATION METHOD |
摘要 |
The present invention provides a memory device by using a single transistor, comprising a circuit including a gate of a memory cell and a P type well substrate for inputting(writing) information and another circuit including a source and a drain for outputting(reading) information. In other word, the memory device includes an information input/output circuit by using a pair of respective read and write terminals. The transistor comprises a source, a drain, and a ferroelectric element gate which are formed in a P type (or N type) well substrate. And the present invention provides a fabrication method for manufacturing the memory circuit, comprising depositing the P type (or N type) well structure on a Si wafer and forming the source, the drain and then the gate in the P type (or N type) well structure. |
申请公布号 |
WO0008649(A1) |
申请公布日期 |
2000.02.17 |
申请号 |
WO1999KR00086 |
申请日期 |
1999.02.26 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY;KIM, YONG, TAE;PARK, YOUNG, KYUN |
发明人 |
KIM, YONG, TAE;PARK, YOUNG, KYUN |
分类号 |
H01L27/115;G11C11/22;H01L27/108;H01L27/12;H01L29/78 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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