| 摘要 |
<p>A substrate (5) is located within a deposition chamber (2), the substrate defining a substrate plane. A liquid precursor (64) including a thinning agent that reduces the surface tension in said liquid precursor solution to a value ranging from 10 to 40 dynes per centimeter is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filtered through a system up to 0.01 micron, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.</p> |
