VAPOR GROWTH METHOD FOR METAL OXIDE DIELECTRIC FILM AND VAPOR GROWTH DEVICE FOR METAL OXIDE DIELECTRIC MATERIAL

摘要

A vapor growth method for a metal oxide dielectric film capable of forming on a plug a metallic oxide excellent in orientation and crystallinity at low temperature, comprising introducing an organic metal material gas and an oxidizing gas into a vacuum container from separate inlets while a substrate disposed in the vacuum container being heated and forming a film with a total pressure within the vacuum container kept at not higher than 1x10<-2>Torr; the method further comprising, when forming a metal oxide dielectric film having a Perovskite type crystal structure, using different film forming conditions for a first film forming condition for forming an initial nucleus or an initial layer and a second film forming condition for growing a film of a Perovskite type crystal structure on the formed initial nucleus and selecting an optimum one of the conditions for film forming; and a vapor growth device for implementing the above vapor growth methods.