| 发明名称 |
Trench capacitor for integrated circuit |
| 摘要 |
<p>A trench capacitor structure is provided which is suitable for use in a semiconductor integrated circuit device, together with the process sequence used to form the structure. The trench capacitor 34 provides increased capacitance by including a capacitor plate including textured, hemispherical-grained silicon 18. The trench capacitor also includes a buried plate 14 to reduce depletion of stored charge from the capacitor. <IMAGE></p> |
| 申请公布号 |
EP0980100(A2) |
申请公布日期 |
2000.02.16 |
| 申请号 |
EP19990306333 |
申请日期 |
1999.08.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BRONNER, GARY B.;ECONOMIKOS, LAERTIS;JAMMY, RAJARAO;PARK, BYEONGJU;RADENS, CARL J.;SCHREMS, MARTIN E. |
| 分类号 |
H01L21/02;H01L21/3215;H01L21/334;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108;H01L29/92;H01L21/824 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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