发明名称 |
Semiconductor device and fabrication method therefor |
摘要 |
An object of the present invention is to provide a semiconductor device having a buried metal wiring structure and a contact structure passing through a film having hydrogen barrier function for electrically connecting respective wiring layers each other and further having a hydrogen diffusing passage allowing hydrogen to reach an interior of the semiconductor device so that an annealing can be performed effectively by using a forming gas and a fabrication method thereof. The hydrogen diffusing passage is provided by providing an opening in a portion of a layer other than a portion thereof immediately below the metal wiring and allows hydrogen to pass the opening to lower layers. |
申请公布号 |
GB9930576(D0) |
申请公布日期 |
2000.02.16 |
申请号 |
GB19990030576 |
申请日期 |
1999.12.23 |
申请人 |
NEC CORPORATION |
发明人 |
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分类号 |
H01L21/3205;H01L21/318;H01L21/324;H01L21/336;H01L21/768;H01L23/00;H01L23/522;H01L23/532;H01L29/78 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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