发明名称 |
On-chip source follower amplifier |
摘要 |
In an on-chip source follower amplifier having at least one amplification circuit formed on a semiconductor substrate of a first conductivity type, the amplification circuit includes a driver transistor, a peripheral device, a first capacitance, and a high resistance. The driver transistor is formed in a first conductive region of a second conductivity type on the semiconductor substrate. The peripheral device is formed in a second conductive region of the second conductivity type on the semiconductor substrate. The second conductive region is isolated from the first conductive region. The first capacitance couples the first conductive region to a source of the driver transistor. The high resistance is connected between the first conductive region and a DC power supply.
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申请公布号 |
US6023195(A) |
申请公布日期 |
2000.02.08 |
申请号 |
US19980144343 |
申请日期 |
1998.08.31 |
申请人 |
NEC CORPORATION |
发明人 |
NAKANO, TAKASHI;MUTOH, NOBUHIKO |
分类号 |
H01L27/146;H01L23/522;H01L27/06;H03F3/50;H04N5/335;H04N5/369;H04N5/372;H04N5/374;(IPC1-7):H03F3/16 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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