发明名称 REWRITING DEVICE OF NONVOLATILE MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a memory rewriting device which detects the runaway of a microcomputer and which makes it difficult to cause a malfunction even with the microcomputer in runaway. SOLUTION: This memory rewriting device is constituted by being connected to a nonvolatile memory whose storage content is rewritable. The device is provided with rewriting means (S104 to S106) which perform prescribed rewriting processing that rewrites the storage content of the nonvolatile memory to new content, a setting means (S102) which initializes rewriting processing of the nonvolatile memory, setting deciding means (S108 to S122) that decide whether or not desired setting is performed by the setting means and an inhibiting means (S126) which inhibits writing processing to the nonvolatile memory when it is decided that the desired setting is not performed by the setting deciding means.
申请公布号 JP2000040033(A) 申请公布日期 2000.02.08
申请号 JP19980207837 申请日期 1998.07.23
申请人 OLYMPUS OPTICAL CO LTD 发明人 SAKABE NAMIKO;MUSASHI TAKESHI;ITO JUNICHI;ISHIMARU HISAAKI
分类号 G06F12/14;G06F12/16;G06F21/02;(IPC1-7):G06F12/16 主分类号 G06F12/14
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