Material of forming silicon oxide film, silicon oxide film, method of forming silicon oxide film and semiconductor element

摘要

A material of forming silicon oxide film comprising a polymer having a repeating unit represented by the following general formula (1A), (1B) or (1C); wherein R1 is a substituent group which can be eliminated at a temperature ranging from 250 DEG C. to the glass transition point of the material of forming silicon oxide film; and R2 is a substituent group which cannot be eliminated at a temperature of 250 DEG C. or more.