| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device with which a conductive film pattern is formed by exposing the entire photoresist film of low stepped region and a high stepped region, by performing an exposing operation. SOLUTION: By the use of a mask pattern 108 which is larger than the pattern size of the conductive film to be formed on a semiconductor substrate in a high stepped region 8, the loss of a photoresist film 104, caused by the quantity of exposing energy when the photoresist film 104 is etched, can be prevented, the loss of critical space resulted from the rounding of the photoresist film 104 can be prevented, and a conductive film pattern of desired size can be obtained by preventing the exposure of the conductive film on the lower part. |
