| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film producing device suitable for the growth of a 'Teflon(R)' thin film in which flatness and crystallinity are controlled as for a thin film producing device producing a thin film by irradiating a 'Teflon(R)' target with an SR beam. SOLUTION: This device has a reaction chamber capable of evacuation, a target holding means 11 for holding a target 12 arranged in the reaction chamber, a target heating means 13 and 16 for heating the target held to the target holding means, a base member holding means 14 holding a base member 15 for forming a thin film opposite to the target held by the target holding means and a synchrotron radiant light beam introducing means 40 introducing a synchrotron radiant light beam 42 into the reaction chamber so as to be applied to the surface of the target held by the target holding means.
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