发明名称 |
Semiconductor image sensor |
摘要 |
An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).
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申请公布号 |
US6023081(A) |
申请公布日期 |
2000.02.08 |
申请号 |
US19970970720 |
申请日期 |
1997.11.14 |
申请人 |
MOTOROLA, INC. |
发明人 |
DROWLEY, CLIFFORD I.;SWENSON, MARK S.;PATTERSON, JENNIFER J.;RAMASWAMI, SHRINATH |
分类号 |
H01L21/265;H01L27/146;H01L31/10;(IPC1-7):H01L31/062;H01L31/113 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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