METHOD FOR FORMING CONTACT IN SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a contact in a semiconductor device and its structure for increasing a margin for false alignment of a conductive film pattern formed at a contact plug and its upper part. SOLUTION: An insulating layer 100 on a semiconductor substrate is etched to form a contact hole 102. The contact hole 102 is partly filled with a conductive layer to form a recessed contact plug 104. Each contact spacer 106a is formed on both side walls of the contact hole on the contact plug 104, and the opening of the contact hole 102 is made narrow. A contact electrode 108a to be joined electrically with the recessed contact plug 104 is formed on the contact spacer 106a and the insulating layer 100. In this case, the contact spacer 106a is made of a substance with an etching selective ratio with the contact electrode 108a.