发明名称 SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a memory system which relieves a system and also controls the reduction of memory capacity. SOLUTION: Respective SLDRAM(sink link dynamic random access memory) 5.0 to 5.n execute a test of an internal memory part in accordance with an execution command that is given from a memory controller 3 and give a defective address to the controller 3. The controller 3 stores the respective defective address of the SLDRAM 5.0 on 5.n and accesses only normal addresses without accessing the defective addresses. The decreasing rate of the memory capacity of a main memory 4 can be suppressed compared with the conventional practice in which an SLDRAM having defective addresses is not accessed.
申请公布号 JP2000040035(A) 申请公布日期 2000.02.08
申请号 JP19980209514 申请日期 1998.07.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 WATANABE NAOYA;MOROOKA KIICHI
分类号 G06F12/16;G11C11/407;G11C29/00;G11C29/04;G11C29/14;G11C29/44;(IPC1-7):G06F12/16 主分类号 G06F12/16
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