发明名称 |
SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a memory system which relieves a system and also controls the reduction of memory capacity. SOLUTION: Respective SLDRAM(sink link dynamic random access memory) 5.0 to 5.n execute a test of an internal memory part in accordance with an execution command that is given from a memory controller 3 and give a defective address to the controller 3. The controller 3 stores the respective defective address of the SLDRAM 5.0 on 5.n and accesses only normal addresses without accessing the defective addresses. The decreasing rate of the memory capacity of a main memory 4 can be suppressed compared with the conventional practice in which an SLDRAM having defective addresses is not accessed.
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申请公布号 |
JP2000040035(A) |
申请公布日期 |
2000.02.08 |
申请号 |
JP19980209514 |
申请日期 |
1998.07.24 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
WATANABE NAOYA;MOROOKA KIICHI |
分类号 |
G06F12/16;G11C11/407;G11C29/00;G11C29/04;G11C29/14;G11C29/44;(IPC1-7):G06F12/16 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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