发明名称 |
Method of simulating semiconductor device |
摘要 |
The present invention provides a method of numeral simulation to a semiconductor device for solving an energy transport model by a coupled method, wherein initial values of carrier temperatures are calculated from an equation of carrier temperatures and an electric field which has been obtained by solving a drift-diffusion model.
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申请公布号 |
US6023575(A) |
申请公布日期 |
2000.02.08 |
申请号 |
US19980058348 |
申请日期 |
1998.04.10 |
申请人 |
NEC CORPORATION |
发明人 |
YOKOTA, IKUHIRO;IIZUKA, TAKAHIRO |
分类号 |
H01L29/00;G06F17/50;(IPC1-7):G06F17/16 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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