| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture a semiconductor pressure sensor having a structure which uses a pasted substrate and in which a reference pressure chamber is made vacuum. SOLUTION: In a manufacturing method, a cavity is formed in a silicon-on- insulator(SOI) part 23 on an SOI wafer (a first silicon substrate) which is composed of a silicon support part 21, an oxide film 22 and the SOI part 23, and a second silicon substrate 30 is then pasted. At this time, both substrates are first bonded temporarily in a vacuum, a heat treatment is then executed under atmospheric pressure, and their bonding strength is increased. When both are pasted, a reference pressure chamber 27 is formed. Then, an oxide film 28 which is formed on the surface of the substrate is removed, the silicon support part 21 is removed while the oxide film 22 is used as an etching stopper, and a diaphragm 29 is formed. After that, the oxide film 22 and an oxide film 31 are removed.
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