SEMICONDUCTOR STRUCTURE HAVING SEMICONDUCTOR ELEMENT AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of forming semiconductor elements, which are electrically insulated from each other within a silicon base body, and a semiconductor structure manufactured by this method. SOLUTION: This method of forming semiconductor elements is executed by having trenches formed in the selected regions of a silicon base body 10 and depositing a barrier material on the sidewalls of the trenches. The barrier material is removed from the first sidewall parts 34 of the trenches, while the barrier material is left on the second sidewall parts 32 of the trenches and a barrier layer 26 is formed in each trench. A dielectric material 38 is deposited in the trenches and the dielectric material is deposited on each of the exposed first sidewall parts within the trenches and the barrier layers within the trenches. The dielectric material is annealed in an oxidizing atmosphere and is highly compacted, and the second sidewall parts of the trenches are prevented from being oxidized by the barrier layers. A plurality of the semiconductor elements are formed within the silicon base body, and the elements are electrically insulated from each other by the dielectric material.