发明名称 Staggered bitline precharge scheme
摘要 A circuit and method for staggering a bitline precharge between particular sections of a memory array. The present invention may be implemented in memories having increasing depths to reduce unacceptably high precharge current requirements associated with high bitline loads. Since the particular memory sections of the memory array are turned on independently, the peak current necessary to charge the particular bitlines is limited. The present invention may be implemented in logic and may therefore be less sensitive to process and temperature variations.
申请公布号 US6023435(A) 申请公布日期 2000.02.08
申请号 US19970995381 申请日期 1997.12.22
申请人 CYPRESS SEMICONDUCTOR CORP. 发明人 NARAYANA, PIDUGU L.;CRESS, DANIEL E.;HAWKINS, ANDREW L.
分类号 G11C7/12;(IPC1-7):G11C7/00 主分类号 G11C7/12
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